Silicon Sputtering Target

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Silicon Sputtering TargetSpecificationsPurity: 5N (99.999 wt%)Relative Density: 2.33g/cm3Type: polycrystalline/ monocrystallineProduction Method: CZ/CastingResistivity: max. 0.2ohm/cmSize: max. 300mm x 150mm x (6~30)mmDopant (PPM)ElementNaLiCaMgCuCdPbNiZnMnBAgFeMoAl≤ ppm0.50.50.50.50.50.50.50.50.50.580.50.50.50.5
Silicon Sputtering Target
 
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